?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet may 2006 unifet tm fdb33n25 / FDI33N25 250v n-channel mosfet features ? 33a, 250v, r ds(on) = 0.094 @v gs = 10 v ? low gate charge ( typical 36.8 nc) ?low c rss ( typical 39 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. d 2 -pak fdb series i 2 -pak fdi series gs d gs d d g s absolute maximum ratings symbol parameter fdb33n25 / FDI33N25 unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 33 20.4 a a i dm drain current - pulsed (note 1) 132 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 918 mj i ar avalanche current (note 1) 33 a e ar repetitive avalanche energy (note 1) 23.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 235 1.89 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.53 c/w r ja * thermal resistance, junction-to-ambient* -- 40 c/w r ja thermal resistance, junction-to-ambient -- 62.5 c/w * when mounted on the minimum pad size recommended (pcb mount)
2 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdb33n25 fdb33n25tm d2-pak 330mm 24mm 800 FDI33N25 FDI33N25tu i2-pak - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 250 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.25 -- v/ c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 16.5a -- 0.077 0.094 g fs forward transconductance v ds = 40v, i d =16.5a (note 4) -- 26.6 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1640 2135 pf c oss output capacitance -- 330 430 pf c rss reverse transfer capacitance -- 39 59 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 33a r g = 25 (note 4, 5) -- 35 80 ns t r turn-on rise time -- 230 470 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 120 250 ns q g total gate charge v ds = 200v, i d = 33a v gs = 10v (note 4, 5) -- 36.8 48 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 17 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 33 a i sm maximum pulsed drain-source diode forward current -- -- 132 a v sd drain-source diode forward voltage v gs = 0v, i s = 33a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 33a di f /dt =100a/ s (note 4) -- 220 -- ns q rr reverse recovery charge -- 1.71 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1.35mh, i as = 33a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 33a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 20406080100 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 10203040 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v * note : i d = 33a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 16.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 p s dc 10 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.53 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet mechanical dimensions d2-pak
8 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet mechanical dimensions i2-pak 9.90 0.20 2.40 0.20 4.50 0.20 1.27 0.10 1.47 0.10 (45 ) 0.80 0.10 10.00 0.20 2.54 typ 2.54 typ 13.08 0.20 9.20 0.20 1.20 0.20 10.08 0.20 max13.40 max 3.00 (0.40) (1.46) (0.94) 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05
9 www.fairchildsemi.com fdb33n25 / FDI33N25 rev a fdb33n25 / FDI33N25 250v n-channel mosfet rev. i19 trademarks the following are registered and unregister ed trademarks fairchild semiconductor ow ns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, functi on or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its pate nt rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express wri tten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? p serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? fact quiet series? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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